Chemical mechanical polishing compositions and methods having enhanced defect inhibition and selectively polishing silicon nitride over silicon dioxide in an acid environment
US10787592B1 · kind B1 · utility
1Cited by
5References
8Claims
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Key dates
| Filing date | May 16, 2019 |
| Grant date | Sep 29, 2020 |
| Priority date | — |
| Expiry date | May 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31055
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Acid chemical mechanical polishing compositions and methods have enhanced defect inhibition and selectively polish silicon nitride over silicon dioxide in an acid environment. The acid chemical mechanic polishing compositions include poly(2-ethyl-2-oxazoline) polymers, anionic functional colloidal silica particles, amine carboxylic acids and have a pH of 5 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.