Patent · US Active

Integrated circuit using photonic bandgap structure

US10788367B2 · kind B2 · utility

1Cited by
32References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 16, 2019
Grant dateSep 29, 2020
Priority date
Expiry dateDec 16, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/181
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

On an integrated circuit (IC) die, sensors are configured to receive electromagnetic energy and to generate signals in response to the electromagnetic energy. An encapsulation material encapsulates the IC die and the sensors. A filter structure includes a diffusion of particles within the encapsulation material. The filter structure includes: a first region configured to pass a first band of the electromagnetic energy to the sensors or to block the first band of the electromagnetic energy from passing to the sensors; and a second region configured to pass a second band of the electromagnetic energy to the sensors or to block the second band of the electromagnetic energy from passing to the sensors. The encapsulation material has a first intrinsic property, and the particles have a second intrinsic property that is different from the first intrinsic property.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.