System handling for first read read disturb
US10790031B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2019 |
| Grant date | Sep 29, 2020 |
| Priority date | — |
| Expiry date | Jun 5, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/563
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A data storage system performs operations including receiving a data read command corresponding to a first memory cell; determining whether the first memory cell is in a first read condition; if the first memory cell is in the first read condition: applying a first voltage level to the first memory cell, the first voltage level being a predetermined voltage level corresponding to a read operation for memory cells in the first read condition; and sensing a first level of current, or lack thereof, through the first memory cell during application of the first voltage level to the first memory cell; and if the first memory cell is not in the first read condition: applying a second voltage level to the first memory cell, the second voltage level being a voltage level corresponding to a read operation for memory cells in a read condition other than the first read condition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.