Selective capping processes and structures formed thereby
US10790142B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2018 |
| Grant date | Sep 29, 2020 |
| Priority date | — |
| Expiry date | Jan 25, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments disclosed herein relate generally to capping processes and structures formed thereby. In an embodiment, a conductive feature, formed in a dielectric layer, has a metallic surface, and the dielectric layer has a dielectric surface. The dielectric surface is modified to be hydrophobic by performing a surface modification treatment. After modifying the dielectric surface, a capping layer is formed on the metallic surface by performing a selective deposition process. In another embodiment, a surface of a gate structure is exposed through a dielectric layer. A capping layer is formed on the surface of the gate structure by performing a selective deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.