Inventor · Zhubei City, TW

Hung-Wen Su

94Patents
9h-index
75Co-inventors
81Inventor score

Filing activity: May 8, 2002 → Jul 27, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US8736056B2 Device for reducing contact resistance of a metal Electricity 390 Active
US9520362B2 Semiconductor device having interconnect layer that includes dielectric segments interleaved with metal components Electricity 33 Active
US9269612B2 Mechanisms of forming damascene interconnect structures Electricity 25 Active
US7259463B2 Damascene interconnect structure with cap layer Electricity 17 Expired
US7312531B2 Semiconductor device and fabrication method thereof Electricity 15 Expired
US7538434B2 Copper interconnection with conductive polymer layer and method of forming the same Electricity 13 Expired
US9343294B2 Interconnect structure having air gap and method of forming the same Electricity 11 Active
US8962473B2 Method of forming hybrid diffusion barrier layer and semiconductor device thereof Electricity 10 Active
US7101790B2 Method of forming a robust copper interconnect by dilute metal doping Electricity 9 Expired
US10770288B2 Selective capping processes and structures formed thereby Electricity 7 Active
US7476306B2 Method and apparatus for electroplating Chemistry; Metallurgy 6 Active
US6797144B2 Method for reducing surface defects in an electrodeposition process Electricity 5 Expired
US10312098B2 Method of forming an interconnect structure Electricity 5 Active
US9496169B2 Method of forming an interconnect structure having an air gap and structure thereof Electricity 5 Active
US10163644B2 Interconnect structure including a conductive feature and a barrier layer on sidewalls and a bottom surface of the conductive feature and method of forming the same Electricity 4 Active
US9029260B2 Gap filling method for dual damascene process Electricity 4 Active
US10790142B2 Selective capping processes and structures formed thereby Electricity 4 Active
US7413976B2 Uniform passivation method for conductive features Chemistry; Metallurgy 3 Expired
US9209073B2 Metal cap apparatus and method Electricity 3 Active
US10199500B2 Multi-layer film device and method Electricity 2 Active
US9887073B2 Physical vapor deposition system and physical vapor depositing method using the same Electricity 2 Active
US11018055B2 Physical vapor deposition process for semiconductor interconnection structures Electricity 2 Active
US7803896B2 Polyimide-titania hybrid materials, their preparation, and film prepared from the materials Chemistry; Metallurgy 2 Active
US7332435B2 Silicide structure for ultra-shallow junction for MOS devices Electricity 2 Expired
US10727350B2 Multi-layer film device and method Electricity 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.