Plasma treatment apparatus and method of fabricating semiconductor device using the same
US10790168B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2018 |
| Grant date | Sep 29, 2020 |
| Priority date | — |
| Expiry date | Jun 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3347
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a plasma treatment apparatus and a method of fabricating semiconductor device using the same. The plasma treatment apparatus includes a chamber which provides a plasma treatment space, a bottom electrode disposed in the chamber and supports a wafer, a top electrode disposed in the chamber facing the bottom electrode, a source power source which supplies a source power output of a first frequency to the bottom electrode, a bias power source which supplies a bias power output of a second frequency different from the first frequency to the bottom electrode, and a pulse power source which applies a pulse voltage to the bottom electrode, wherein the bias power output is a bias voltage which is pulse-modulated to a first voltage level in a first time section and pulse-modulated to a second voltage level in a second time section and is applied to the bottom electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.