Heat radiation device, semiconductor package comprising the same, and semiconductor device comprising the same
US10790213B2 · kind B2 · utility
1Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2018 |
| Grant date | Sep 29, 2020 |
| Priority date | — |
| Expiry date | Sep 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18161
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A heat radiation device includes a semiconductor substrate. A first electrode is disposed on the semiconductor substrate. A second electrode is disposed on the semiconductor substrate and is spaced apart from the first electrode. A first through electrode is disposed in the semiconductor substrate. The first through electrode is electrically connected to the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.