Plasma activation treatment for wafer bonding

US10790260B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Mengyong Liu · 红钢城街道, CN
• Tao Ding · Pleasanton, US
• Wu Liu · New Taipei, TW
• Rui Xing · Hubei, CN
• Guoliang Chen · Hangzhou City, CN

Key dates

• Filing date: Mar 15, 2019
• Grant date: Sep 29, 2020
• Expiry date: Mar 15, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/14511
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of wafer bonding methods are disclosed. In an example, a first plasma activation treatment based on oxygen or an inert gas is performed on a front surface of a first wafer and a front surface of a second wafer. After the first plasma activation treatment, a second plasma activation treatment based on water molecules is performed on the front surface of the first wafer and the front surface of the second wafer. After the second plasma activation treatment, the first wafer and the second wafer are bonded such that the treated front surface of the first wafer is in physical contact with the treated front surface of the second wafer.