CMOS image sensor having indented photodiode structure
US10790321B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2018 |
| Grant date | Sep 29, 2020 |
| Priority date | — |
| Expiry date | Jun 25, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a floating diffusion region disposed at one side of a transfer gate within a substrate and a photo detecting column disposed at the other side of the transfer gate opposing to the floating diffusion region within the substrate. The photo detecting column comprises a doped sensing layer with a doping type opposite to that of the substrate. The photo detecting column and the substrate are in contact with each other at a junction interface comprising one or more recessed portions. By forming the junction interface with recessed portions, the junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.