Patent · US Active

Method for forming ohmic contacts

US10790374B2 · kind B2 · utility

0Cited by

3References

20Claims

0Family size

Assignee

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC · US

Inventors

Aurore CONSTANT · Oudenaarde, BE
Peter Coppens · Duffel, BE

Key dates

Filing date	Jun 25, 2018
Grant date	Sep 29, 2020
Priority date	—
Expiry date	Jun 25, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/475
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Implementations of an ohmic contact for a gallium nitride (GaN) device may include: a first layer including aluminum coupled directly with the GaN device; the GaN having a heterostructure with an undoped GaN channel and a semi-insulating aluminum gallium nitride (AlGaN) barrier, all the foregoing operatively coupled with a substrate; a second layer including titanium coupled over the first layer; and a third layer including an anti-diffusion material coupled with the second layer. A passivation layer may be coupled between the AlGaN barrier and the first layer of the ohmic contact. The passivation layer may surround the ohmic contact.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.