High electron mobility transistor
US10790375B2 · kind B2 · utility
3Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2019 |
| Grant date | Sep 29, 2020 |
| Priority date | — |
| Expiry date | Apr 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7605
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high electron mobility transistor (HEMT) includes a first compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A salicide source feature and a salicide drain feature are in contact with the first III-V compound layer through the second III-V compound layer. A gate electrode is disposed over a portion of the second compound layer between the salicide source feature and the salicide drain feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.