Inventor · Hsinchu, TW

Fu-Wei Yao

76Patents
7h-index
16Co-inventors
65Inventor score

Filing activity: Jul 11, 2011 → Aug 3, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US9379191B2 High electron mobility transistor including an isolation region Electricity 22 Active
US8624296B1 High electron mobility transistor including an embedded flourine region Electricity 12 Active
US9425301B2 Sidewall passivation for HEMT devices Electricity 12 Active
US9111905B2 High electron mobility transistor and method of forming the same Electricity 8 Active
US8507920B2 Semiconductor structure and method of forming the same Electricity 8 Active
US8680535B2 High electron mobility transistor structure with improved breakdown voltage performance Electricity 7 Active
US9882553B2 Semiconductor device and circuit protecting method Electricity 7 Active
US10411681B2 Semiconductor device and circuit protecting method Electricity 6 Active
US9443969B2 Transistor having metal diffusion barrier Electricity 6 Active
US8963162B2 High electron mobility transistor Electricity 5 Active
US10050117B2 Method of forming a high electron mobility transistor Electricity 4 Active
US8697505B2 Method of forming a semiconductor structure Electricity 4 Active
US10522647B2 Sidewall passivation for HEMT devices Electricity 3 Active
US10790375B2 High electron mobility transistor Electricity 3 Active
US9165839B2 Plasma protection diode for a HEMT device Electricity 3 Active
US8841703B2 High electron mobility transistor and method of forming the same Electricity 3 Active
US8946771B2 Gallium nitride semiconductor devices and method making thereof Electricity 3 Active
US9147743B2 High electron mobility transistor structure with improved breakdown voltage performance Electricity 3 Active
US9704968B2 Method of forming a high electron mobility transistor Electricity 2 Active
US9508807B2 Method of forming high electron mobility transistor Electricity 2 Active
US11522066B2 Sidewall passivation for HEMT devices Electricity 2 Active
US11404557B2 Method of forming a high electron mobility transistor Electricity 2 Active
US9627275B1 Hybrid semiconductor structure on a common substrate Electricity 2 Active
US9685525B2 Sidewall passivation for HEMT devices Electricity 1 Active
US9583588B2 Method of making high electron mobility transistor structure Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.