Patent · US Active

FET operational temperature determination by gate structure resistance thermometry

US10790787B2 · kind B2 · utility

1Cited by

48References

36Claims

0Family size

Assignee

MACOM Technology Solutions Holdings, Inc. · US

Inventors

Simon J. Mahon · Avalon, AU
Allen W. Hanson · Cary, US
Chuanxin Lian · Westford, US
Frank Gao · Naperville, US
Rajesh Baskaran · Dracut, US
Bryan Schwitter · Sydney, AU

Key dates

Filing date	Aug 12, 2019
Grant date	Sep 29, 2020
Priority date	—
Expiry date	Aug 12, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/257
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Thermally-sensitive structures and methods for sensing the temperature in a region of a FET during device operation are described. The region may be at or near a region of highest temperature achieved in the FET. Metal resistance thermometry (MRT) can be implemented with gate or source structures to evaluate the temperature of the FET.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.