Patent · US Active

Method for producing thin MEMS wafers

US10793430B2 · kind B2 · utility

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7Claims

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Assignee

Robert Bosch GmbH · DE

Inventors

Sebastien Loiseau · Stuttgart, DE
Arnim Hoechst · Lörrach, DE
Bernhard Gehl · Wannweil, DE
Eugene Moliere Tanguep Njiokep · Reutlingen, DE
Sandra Altmannshofer · Augsburg, DE

Key dates

Filing date	Sep 14, 2018
Grant date	Oct 6, 2020
Priority date	—
Expiry date	Oct 19, 2038

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB81C2201/056
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A method for producing thin MEMS wafers including: (A) providing an SOI wafer having an upper silicon layer, a first SiO2 layer and a lower silicon layer, the first SiO2 layer being situated between the upper silicon layer and the lower silicon layer, (B) producing a second SiO2 layer on the upper silicon layer, (C) producing a MEMS structure on the second SiO2 layer, (D) introducing clearances into the lower silicon layer down to the first SiO2 layer, (E) etching the first SiO2 layer and thus removing the lower silicon layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.