Cleaning composition and method for fabricating electronic device using the same
US10793812B2 · kind B2 · utility
1Cited by
11References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2018 |
| Grant date | Oct 6, 2020 |
| Priority date | — |
| Expiry date | Jul 28, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating an electronic device including a semiconductor memory may include: forming a material layer over a substrate; forming a material pattern by etching the material layer, the etching providing an etch residue on sidewalls of the material pattern; and removing the etch residue, wherein removing of the etch residue includes performing a cleaning process using a cleaning composition including water and a fluorine-containing compound or an amine, and having a pH in a range of 7 to 14.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.