Sample rod growth and resistivity measurement during single crystal silicon ingot production
US10793969B2 · kind B2 · utility
1Cited by
3References
18Claims
0Family size
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Key dates
| Filing date | Jun 27, 2018 |
| Grant date | Oct 6, 2020 |
| Priority date | — |
| Expiry date | Nov 13, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for forming single crystal silicon ingots with improved resistivity control. The methods involve growth and resistivity measurement of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The resistivity of the sample rod may be measured directly by contacting a resistivity probe with a planar segment formed on the sample rod. The sample rod may be annealed in a thermal donor kill cycle prior to measuring the resistivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.