Methods of defect inspection
US10795270B2 · kind B2 · utility
1Cited by
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19Claims
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Assignee
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Key dates
| Filing date | Dec 6, 2017 |
| Grant date | Oct 6, 2020 |
| Priority date | — |
| Expiry date | Oct 31, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Embodiments of the present disclosure relate to methods for defect inspection. After pattern features are formed in a structure layer, a dummy filling material having dissimilar optical properties from the structure layer is filled in the pattern features. The dissimilar optical properties between materials in the pattern features and the structure layer increase contrast in images captured by an inspection tool, thus increasing the defect capture rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.