Thin film transistor array substrate and method of producing the same
US10797082B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2018 |
| Grant date | Oct 6, 2020 |
| Priority date | — |
| Expiry date | Sep 17, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/123
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A TFT array substrate includes gate electrodes constructed from a first metal film, a first insulating film on the first metal film, channels constructed from a semiconductor film on the first insulating film, source electrodes constructed from a second metal film on the semiconductor film, drain electrodes constructed from the second metal film, pixel electrodes constructed from portions of the semiconductor film having reduced resistances, a second insulating film on the semiconductor film and the second metal film, and a common electrode constructed from a transparent electrode film on the second insulating film. The channels overlap the gate electrodes. The source electrodes and the drain electrodes are connected to first ends and second ends of the channels, respectively. The pixel electrodes are connected to the drain electrodes. The second insulating film includes sections overlapping the pixel electrodes without openings. The common electrode overlaps at least the pixel electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.