Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US10797133B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jun 21, 2018 |
| Grant date | Oct 6, 2020 |
| Priority date | — |
| Expiry date | Jun 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing a phosphorus doped silicon arsenide film is disclosed. The method may include, providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, exposing the substrate to a silicon precursor, an arsenic precursor, and a phosphorus dopant precursor, and depositing the phosphorus doped silicon arsenide film over a surface of the substrate. Semiconductor device structures including a phosphorus doped silicon arsenide film deposited by the methods of the disclosure are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.