Semiconductor device and method for fabricating the same
US10797157B1 · kind B1 · utility
11Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 4, 2019 |
| Grant date | Oct 6, 2020 |
| Priority date | — |
| Expiry date | Jul 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a polymer block on a corner between the gate structure and the substrate; performing an oxidation process to form a first seal layer on sidewalls of the gate structure; and forming a source/drain region adjacent to two sides of the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.