Transistor comprising a lengthened gate
US10797158B2 · kind B2 · utility
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10Claims
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Assignee
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Key dates
| Filing date | Jul 16, 2018 |
| Grant date | Oct 6, 2020 |
| Priority date | — |
| Expiry date | Aug 2, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOS transistor is produced on and in an active zone and included a source region and a drain region. The active zone has a width measured transversely to a source-drain direction. A conductive gate region of the MOS transistor includes a central zone and, at a foot of the central zone, at least one stair that extends beyond the central zone along at least an entirety of the width of the active zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.