FinFET device having a channel defined in a diamond-like shape semiconductor structure
US10797162B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2018 |
| Grant date | Oct 6, 2020 |
| Priority date | — |
| Expiry date | Dec 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a FinFET device. The FinFET device comprises a semiconductor substrate of a first semiconductor material; a fin structure of the first semiconductor material overlying the semiconductor substrate, wherein the fin structure has a top surface of a first crystal plane orientation; a diamond-like shape structure of a second semiconductor material disposed over the top surface of the fin structure, wherein the diamond-like shape structure has at least one surface of a second crystal plane orientation; a gate structure disposed over the diamond-like shape structure, wherein the gate structure separates a source region and a drain region; and a channel region defined in the diamond-like shape structure between the source and drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.