Magnetoresistive device and method of fabricating same
US10797224B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 23, 2018 |
| Grant date | Oct 6, 2020 |
| Priority date | — |
| Expiry date | Feb 23, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5615
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The disclosed technology generally relates to magnetoresistive devices, and more particularly to a magnetic tunnel junction (MTJ) device formed in an interconnection structure, and to a method of integrating the (MTJ) device in the interconnection structure. According to an aspect, a device includes a first interconnection level including a first dielectric layer and a first set of conductive paths arranged in the first dielectric layer, a second interconnection level arranged on the first connection level and including a second dielectric layer and a second set of conductive paths arranged in the second dielectric layer, and a third interconnection level arranged on the second interconnection level and including a third dielectric layer and a third set of conductive paths arranged in the third dielectric layer. The device additionally includes a magnetic tunnel junction (MTJ) device including a bottom layer, a top layer and an MTJ structure arranged between the bottom layer and the top layer, wherein the bottom layer is connected to a bottom layer contact portion of the first set of conductive paths and the top layer is connected to a top layer contact portion of the second or thi…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.