Raf Appeltans
4Patents
1h-index
5Co-inventors
30Inventor score
Filing activity: Dec 2, 2016 → Mar 31, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10797224B2 | Magnetoresistive device and method of fabricating same | Physics | 3 | Active |
| US10127961B2 | Three transistor two junction magnetoresistive random-access memory (MRAM) bit cell | Physics | 1 | Active |
| US11201093B2 | Method of manufacturing a semiconductor device including the horizontal channel FET and the vertical channel FET | Electricity | 0 | Active |
| US11217488B2 | Method of forming a semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.