Method for producing bulk silicon carbide

US10801126B2 · kind B2 · utility

Assignee

• GTAT Corporation · US

Inventors

• Roman V. Drachev · Bedford, US
• Parthasarathy Santhanaraghavan · Nashua, US
• Andriy M. Andrukhiv · Hollis, US
• David S. Lyttle · Amherst, US

Key dates

• Filing date: Sep 5, 2014
• Grant date: Oct 13, 2020
• Expiry date: Dec 3, 2034

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/36
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material.