Roman V. Drachev
11Patents
2h-index
7Co-inventors
39Inventor score
Filing activity: Oct 18, 2013 → Nov 30, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9797064B2 | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion | Emerging Cross-Sectional Technologies | 9 | Active |
| US10801126B2 | Method for producing bulk silicon carbide | Chemistry; Metallurgy | 4 | Active |
| US10633762B2 | Method for producing bulk silicon carbide by sublimation of a silicon carbide precursor prepared from silicon and carbon particles or particulate silicon carbide | Chemistry; Metallurgy | 1 | Active |
| US10793971B2 | Method and apparatus for producing bulk silicon carbide using a silicon carbide seed | Emerging Cross-Sectional Technologies | 1 | Active |
| US10435810B2 | Graphite crucible for sublimation growth of SiC crystal | Emerging Cross-Sectional Technologies | 1 | Active |
| US10851473B2 | Apparatus for producing bulk silicon carbide | Emerging Cross-Sectional Technologies | 1 | Active |
| US9512542B2 | Bulk silicon carbide having low defect density | Emerging Cross-Sectional Technologies | 0 | Active |
| US11421343B2 | Method and apparatus for producing bulk silicon carbide using a silicon carbide seed | Emerging Cross-Sectional Technologies | 0 | Active |
| US11591714B2 | Apparatus for producing bulk silicon carbide | Emerging Cross-Sectional Technologies | 0 | Active |
| US11505876B2 | Method for producing bulk silicon carbide | Chemistry; Metallurgy | 0 | Active |
| US11434582B2 | Method for producing bulk silicon carbide by sublimation of a silicon carbide precursor prepared from silicon and carbon particles or particulate silicon carbide | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.