Pattern defect detection method
US10802073B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2018 |
| Grant date | Oct 13, 2020 |
| Priority date | — |
| Expiry date | Nov 13, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A pattern defect detection method capable of detecting a pattern defect of a semiconductor integrated circuit with higher accuracy is disclosed. The pattern defect detection method includes: extracting an image of an inspection target pattern from an image of a specimen; identifying a reference pattern from design data, the reference pattern having the same shape and the same position as those of the inspection target pattern; calculating a brightness index value indicating a brightness of an entirety of the inspection target pattern; repeating said extracting an inspection target pattern, said identifying a reference pattern, and said calculating a brightness index value, thereby building mass data containing brightness index values of inspection target patterns and corresponding reference patterns; determining a standard range of brightness index value based on the brightness index values contained in the mass data; and detecting a defect of the inspection target pattern based on whether or not the calculated brightness index value is within the standard range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.