Methods of detecting printing defects on photoresist patterns
US10802396B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 30, 2019 |
| Grant date | Oct 13, 2020 |
| Priority date | — |
| Expiry date | May 30, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of detecting defects of a photoresist pattern includes generating a scanning electron microscope (SEM) image of a surface of a photoresist pattern and signal intensity data relative to pixel position of the surface of the photoresist pattern. The method also includes setting a lower reference intensity threshold value and an upper reference intensity threshold value used as reference values for detecting defects. The method further includes classifying a pixel position of the signal intensity data having a signal intensity value which is less than the lower reference intensity threshold value or greater than the upper reference intensity threshold value as a defect position.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.