Methods and systems for writing to magnetic memory devices utilizing alternating current
US10803916B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2017 |
| Grant date | Oct 13, 2020 |
| Priority date | — |
| Expiry date | Dec 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for selectively writing to STT-MRAM using an AC current is provided. The method is performed in a memory device including two or more multilevel magnetic tunnel junctions (MTJs) arranged in series with respect to a single terminal of a transistor, where the two or more multilevel MTJs include a first MTJ having a first magnetic characteristic and first electrical characteristic and a second MTJ having a second magnetic characteristic that is distinct from the first magnetic characteristic and a second electrical characteristic. The method includes writing to an MTJ. The writing includes applying a DC current to the two or more MTJs and applying an AC current to the two or more MTJs, where the AC current is adjusted to a frequency that is tuned to a write assist frequency corresponding to the respective MTJ.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.