Patent · US Active

Method for programming a resistive random access memory

US10803940B2 · kind B2 · utility

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11Claims

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Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Gilbert Sassine · Grenoble, FR
Gabriel Molas · Grenoble, FR

Key dates

Filing date	May 10, 2019
Grant date	Oct 13, 2020
Priority date	—
Expiry date	May 10, 2039

Classification

Technology area (CPC G)Physics
CPC primaryG11C2013/0092
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A method for programming a resistive random access memory including a matrix of memory cells. This method includes a programming procedure that includes applying a programming voltage ramp to the memory cells of a part at least of the matrix, the programming voltage ramp starting at a first non-zero voltage value, called start voltage, and ending at a second voltage value, called stop voltage, greater in absolute value than the first voltage value. The stop voltage is determined such that each memory cell of said at least one part of the matrix has a first probability between 1/(10N) and 1/N of having a programming voltage greater in absolute value than the stop voltage (Vstop), N being the number of memory cells in the at least one part of the matrix.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.