SiC film structure and method for manufacturing SiC film structure
US10804096B2 · kind B2 · utility
0Cited by
3References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 25, 2019 |
| Grant date | Oct 13, 2020 |
| Priority date | — |
| Expiry date | Oct 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67306
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A SiC film structure capable of providing a sealing structure. A SiC film structure for obtaining a three-dimensional SiC film by forming the SiC film in an outer circumference of a substrate using a vapor deposition type film formation method and removing the substrate, the SiC film structure including: a main body having a three-dimensional shape formed of a SiC film and having an opening for removing the substrate; and a lid configured to cover the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.