Semiconductor device and method for forming p-type conductive channel in diamond using abrupt heterojunction

US10804104B2 · kind B2 · utility

Assignee

• THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION · CN

Inventors

• Jingjing Wang · Shanghai, CN
• Zhihong Feng · Shijiazhuang, CN
• Cui Yu · Shijiazhuang, CN
• Chuangjie Zhou · Shijiazhuang, CN
• Qingbin Liu · Shijiazhuang, CN
• Zezhao He · Shijiazhuang, CN

Key dates

• Filing date: Dec 12, 2017
• Grant date: Oct 13, 2020
• Expiry date: Dec 12, 2037

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present application discloses a semiconductor device and a method for forming a p-type conductive channel in a diamond using an abrupt heterojunction, which pertain to the technical field of fabrication of semiconductor devices. The method includes: forming a diamond layer on a substrate; forming one or multiple layers of a heterogeneous elementary substance or compound having an acceptor characteristic on an upper surface of the diamond layer; forming a heterojunction at an interface between the diamond layer and an acceptor layer; forming two-dimensional hole gas at one side of the diamond layer with a distance of 10 nm-20 nm away from the heterojunction; and using the two-dimensional hole gas as a p-type conductive channel. The method enables a concentration and a mobility of carriers to maintain stable at a temperature range of 0° C.-1000° C., thereby realizing normal operation of the diamond device at high temperature environment.