Well and punch through stopper formation using conformal doping
US10804107B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2019 |
| Grant date | Oct 13, 2020 |
| Priority date | — |
| Expiry date | Nov 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for doping fins includes, for a first dopant layer formed in a first region and a second region to a height continuously below a top portion of a plurality of fins such that an entirety of the first dopant layer is formed below the top portion of the plurality of fins, and a dielectric layer formed over the top portion of the plurality of fins, removing the dielectric layer and the first dopant layer in the first region to expose a first fin in the first region, forming a second dopant layer over the first fin, and annealing to drive dopants into the fins from the first dopant layer in the second region and from the second dopant layer in the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.