Indirect readout FET
US10804261B2 · kind B2 · utility
0Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2019 |
| Grant date | Oct 13, 2020 |
| Priority date | — |
| Expiry date | Oct 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/689
Abstract
A metal-insulator-metal (MIM) capacitor structure includes source and drain regions formed within a semiconductor substrate, a first conducting layer formed over the source and drain regions, and a dielectric layer formed over the first conducting layer. The MIM capacitor structure further includes a second conducting layer formed over the dielectric layer, and a sidewall dielectric formed adjacent the first conducting layer and the dielectric layer. An electric field is created indirectly through the sidewall dielectric to an adjacent field effect transistor (FET) channel in the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.