Absorption enhancement structure for image sensor

US10804315B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Ching-Chung Su · Tainan, TW
• Hung-Wen Hsu · Tainan, TW
• Jiech-Fun Lu · 巷口, TW
• Shih Pei Chou · Tainan, TW

Key dates

• Filing date: Nov 25, 2019
• Grant date: Oct 13, 2020
• Expiry date: Nov 25, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/807

Abstract

The present disclosure, in some embodiments, relates to method of forming an integrated chip. The method may be performed by forming an image sensing element within a substrate. A dry etching process is performed on the substrate to form a plurality of intermediate protrusions defined by the substrate. A wet etching process is performed on the plurality of intermediate protrusions to form a plurality of protrusions from the plurality of intermediate protrusions.