Non-collinear antiferromagnets for high density and low power spintronics devices
US10804459B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Dec 19, 2018 |
| Grant date | Oct 13, 2020 |
| Priority date | — |
| Expiry date | Dec 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3286
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Spintronic devices based on metallic antiferromagnets having a non-collinear spin structure are provided. Also provided are methods for operating the devices. The spintronic devices are based on a bilayer structure that includes a spin torque layer of an antiferromagnetic material having a non-collinear triangular spin structure adjoining a layer of ferromagnetic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.