Inventor · Madison, WI, US

Chang-Beom Eom

20Patents
3h-index
29Co-inventors
63Inventor score

Filing activity: Nov 19, 1993 → Apr 11, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US5747918A Display apparatus comprising diamond field emitters Electricity 17 Expired
US5982034A Conductive oxide films Electricity 11 Expired
US9627490B1 Epitaxial growth of high quality vanadium dioxide films with template engineering Electricity 9 Active
US7449738B2 Strain-engineered ferroelectric thin films Electricity 3 Expired
US9972687B1 High quality vanadium dioxide films Electricity 2 Active
US10580872B2 Oxide heterostructures having spatially separated electron-hole bilayers Electricity 2 Active
US10566521B2 Magnetic memory devices based on 4D and 5D transition metal perovskites Electricity 1 Active
US10804459B2 Non-collinear antiferromagnets for high density and low power spintronics devices Electricity 1 Active
US12080783B2 Spin transistors based on voltage-controlled magnon transport in multiferroic antiferromagnets Physics 0 Active
US10796907B2 Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films Electricity 0 Active
US11335781B2 Vanadium dioxide heterostructures having an isostructural metal-insulator transition Electricity 0 Active
US11437234B2 Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films Electricity 0 Active
US12180610B2 Hybrid pulsed laser deposition of complex oxide thin films made from elements having a large vapor pressure mismatch Chemistry; Metallurgy 0 Active
US12345930B2 Magnetic-field-tunable terahertz optoelectronic transducer Physics 0 Active
US10216013B2 Vanadium dioxide-based optical and radiofrequency switches Physics 0 Active
US11749527B2 Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films Electricity 0 Active
US10649240B2 Vanadium dioxide-based optical and radiofrequency switches Physics 0 Active
US7754351B2 Epitaxial (001) BiFeO3 membranes with substantially reduced fatigue and leakage Chemistry; Metallurgy 0 Active
US11879185B2 Low-defect-density gamma phase aluminum oxide substrates for heteroepitaxial synthesis Chemistry; Metallurgy 0 Active
US11189780B2 Anisotropic strain-driven magnetoelectric devices Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.