Patent · US Active

Dynamic memory physical unclonable function

US10811073B2 · kind B2 · utility

2Cited by

2References

8Claims

0Family size

Assignee

Birad—Research & Development Company Ltd. · IL

Inventors

Robert Giterman · Beer Sheva, IL
Yoav Weizman · Kfar Vitkin, IL
Adam Teman · Lausanne, CH

Key dates

Filing date	Apr 18, 2019
Grant date	Oct 20, 2020
Priority date	—
Expiry date	Apr 18, 2039

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/409
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A method uses data retention time (DRT) characteristics of a logic-compatible gain-cell embedded DRAM (dynamic random-access memory) (GC-eDRAM) array in a transistor circuit as a source for physical unclonable function (PUF) signature extraction of the circuit.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.