Semiconductor device with contracted isolation feature
US10811321B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Aug 5, 2019 |
| Grant date | Oct 20, 2020 |
| Priority date | — |
| Expiry date | Aug 5, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate having a semiconductor fin, an isolation feature over the substrate and not overlapping the semiconductor fin, a first gate structure over the substrate, and a second gate structure over the substrate. The isolation feature is closer to the first gate structure than the second gate structure. The first gate structure has a maximum width greater than a maximum width of the second gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.