Satellite communication transmitter with improved thermal management
US10811335B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2019 |
| Grant date | Oct 20, 2020 |
| Priority date | — |
| Expiry date | May 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/475
- WIPO fieldTransport
- WIPO sectorMechanical engineering
Abstract
A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a radiant cooling element via a heat conducting element. The RF amplifier chip comprises an active layer disposed on a high thermal conductivity substrate having a thermal conductivity greater than about 1000 W/mK, maximizing heat conduction out of the RF amplifier chip and ultimately into outer space when the chip is operating within a satellite under normal transmission conditions. In one embodiment, the active layer comprises materials selected from the group consisting of GaN, InGaN, AlGaN, and InGaAlN alloys. In one embodiment, the high thermal conductivity substrate comprises synthetic diamond.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.