Transistor device with gate resistor

US10811529B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Andreas Riegler · Tenneck, AT
• Christian Fachmann · Graz, AT
• Bjoern Fischer · Munich, DE
• Franz Hirler · Isen, DE
• Gabor Mezoesi · Villach, AT
• Hans Weber · Villach, AT

Key dates

• Filing date: Apr 10, 2019
• Grant date: Oct 20, 2020
• Expiry date: Apr 15, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A transistor device comprises at least one gate electrode, a gate runner connected to the at least one gate electrode and arranged on top of a semiconductor body, a plurality of gate pads arranged on top of the semiconductor body, and a plurality of resistor arrangements. Each gate pad is electrically connected to the gate runner via a respective one of the plurality of resistor arrangements, and each of the resistor arrangements has an electrical resistance, wherein the resistances of the plurality of resistor arrangements are different.