Inventor · Isen, DE

Franz Hirler

382Patents
18h-index
158Co-inventors
89Inventor score

Filing activity: Nov 6, 1998 → May 17, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6465843B1 MOS-transistor structure with a trench-gate-electrode and a limited specific turn-on resistance and method for producing an MOS-transistor structure Electricity 108 Expired
US6388287B2 Switch mode power supply with reduced switching losses Electricity 76 Expired
US6833584B2 Trench power semiconductor Electricity 75 Expired
US8569842B2 Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices Electricity 73 Active
US6690062B2 Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitance Electricity 72 Expired
US7005351B2 Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration Electricity 70 Expired
US6806533B2 Semiconductor component with an increased breakdown voltage in the edge area Electricity 68 Expired
US6720616B2 Trench MOS transistor Electricity 61 Expired
US7091573B2 Power transistor Electricity 44 Expired
US6891223B2 Transistor configuration with a structure for making electrical contact with electrodes of a trench transistor cell Electricity 38 Expired
US6998678B2 Semiconductor arrangement with a MOS-transistor and a parallel Schottky-diode Electricity 34 Expired
US8970262B2 Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices Electricity 27 Active
US8080858B2 Semiconductor component having a space saving edge structure Electricity 23 Active
US8247865B2 Semiconductor structure, method for operating a semiconductor structure and method for producing a semiconductor structure Electricity 23 Active
US7186618B2 Power transistor arrangement and method for fabricating it Electricity 22 Expired
US7459365B2 Method for fabricating a semiconductor component Electricity 19 Active
US8022474B2 Semiconductor device Electricity 19 Active
US6498382B2 Semiconductor configuration Electricity 18 Expired
US8022470B2 Semiconductor device with a trench gate structure and method for the production thereof Electricity 17 Active
US6576953B2 Vertical semiconductor component with source-down design and corresponding fabrication method Electricity 17 Expired
US7858478B2 Method for producing an integrated circuit including a trench transistor and integrated circuit Electricity 16 Active
US7777278B2 Lateral semiconductor component with a drift zone having at least one field electrode Electricity 14 Active
US7173306B2 Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone Electricity 14 Expired
US7655975B2 Power trench transistor Electricity 14 Expired
US7750397B2 Semiconductor component including compensation zones and discharge structures for the compensation zones Electricity 13 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.