Transistor device with gate resistor
US10811531B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2019 |
| Grant date | Oct 20, 2020 |
| Priority date | — |
| Expiry date | Apr 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/517
Abstract
Disclosed is a transistor device with at least one gate electrode, a gate runner connected to the at least one gate electrode and arranged on top of a semiconductor body, and a gate pad arranged on top of the semiconductor body and electrically connected to the gate runner. The gate runner includes a first metal line, a second metal line on top of the first metal line, a first gate runner section, and at least one second gate runner section. The at least one second gate runner section is arranged between the first gate runner section and the gate pad. A cross sectional area of the second metal line in the at least one second gate runner section is less than 50% of the cross sectional area of the second metal line in the first gate runner section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.