Semiconductor device having germanium containing active pattern and method for fabricating the same
US10811541B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 23, 2019 |
| Grant date | Oct 20, 2020 |
| Priority date | — |
| Expiry date | Jan 23, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a gate electrode extending in a first direction on a substrate, a first active pattern extending in a second direction intersecting the first direction on the substrate to penetrate the gate electrode, the first active pattern including germanium, an epitaxial pattern on a side wall of the gate electrode, a first semiconductor oxide layer between the first active pattern and the gate electrode, and including a first semiconductor material, and a second semiconductor oxide layer between the gate electrode and the epitaxial pattern, and including a second semiconductor material. A concentration of germanium of the first semiconductor material may be less than a concentration of germanium of the first active pattern, and the concentration of germanium of the first semiconductor material may be different from a concentration of germanium of the second semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.