Hyoung-sub Kim
27Patents
9h-index
45Co-inventors
75Inventor score
Filing activity: Apr 14, 1994 → Sep 30, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5574299A | Semiconductor device having vertical conduction transistors and cylindrical cell gates | Electricity | 126 | Expired |
| US8158976B2 | Thin-film transistor and method of manufacturing the same | Electricity | 32 | Active |
| US9012321B1 | Method of manufacturing semiconductor device | Electricity | 18 | Active |
| US5476807A | Method for forming fine patterns in a semiconductor device | Electricity | 16 | Expired |
| US6939765B2 | Integration method of a semiconductor device having a recessed gate electrode | Electricity | 14 | Expired |
| US5753562A | Methods of forming semiconductor devices in substrates having inverted-trench isolation regions therein | Emerging Cross-Sectional Technologies | 14 | Expired |
| US5547889A | Method of forming a semiconductor device having vertical conduction transistors and cylindrical cell gates | Electricity | 13 | Expired |
| US9419000B2 | Methods of manufacturing semiconductor devices having buried contacts and related semiconductor devices | Electricity | 12 | Active |
| US6051492A | Method of manufacturing a wiring layer in semiconductor device | Emerging Cross-Sectional Technologies | 10 | Expired |
| US10037999B2 | Semiconductor device including landing pad for connecting substrate and capacitor | Electricity | 8 | Active |
| US6218690A | Transistor having reverse self-aligned structure | Electricity | 6 | Expired |
| US7183600B2 | Semiconductor device with trench gate type transistor and method of manufacturing the same | Electricity | 5 | Expired |
| US9349633B2 | Semiconductor devices and methods of manufacturing the same | Electricity | 5 | Active |
| US9953981B2 | Methods of manufacturing semiconductor devices having buried contacts and related semiconductor devices | Electricity | 5 | Active |
| US7135744B2 | Semiconductor device having self-aligned contact hole and method of fabricating the same | Electricity | 4 | Expired |
| US6168990A | Method for fabricating Dram cell capacitor | Electricity | 3 | Expired |
| USD986502S1 | Shampoo headrest | General | 2 | Active |
| US11705503B2 | Semiconductor device including non-sacrificial gate spacers and method of fabricating the same | Electricity | 2 | Active |
| US7057242B2 | Transistor structures having access gates with narrowed central portions | Electricity | 1 | Expired |
| US9613966B2 | Semiconductor device | Electricity | 1 | Active |
| US9754944B2 | Method of manufacturing semiconductor device | Electricity | 0 | Active |
| US7592215B2 | Semiconductor device having self-aligned contact hole and method of fabricating the same | Electricity | 0 | Active |
| US7709346B2 | Semiconductor device with trench gate type transistor and method of manufacturing the same | Electricity | 0 | Active |
| US10811541B2 | Semiconductor device having germanium containing active pattern and method for fabricating the same | Electricity | 0 | Active |
| US11062818B2 | Stacking structure having material layer on graphene layer and method of forming material layer on graphene layer | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.