Laser lift-off masks
US10811575B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2018 |
| Grant date | Oct 20, 2020 |
| Priority date | — |
| Expiry date | Jul 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0362
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques related to laser lift-off masks are disclosed. In some embodiments, masking material is applied to a substrate that is attached to a plurality of semiconductor device sets. More specifically, the masking material is applied to one or more regions of the substrate between the semiconductor device sets. When the semiconductor device sets are embedded in a filling material, the masking material may be situated between the substrate and the filling material. Thus, transmitting light through the substrate toward the semiconductor device sets causes the substrate to become detached from the semiconductor device sets. However, the light is at least partially occluded by the masking material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.