Patent · US Active

Semiconductor laser

US10811843B2 · kind B2 · utility

3Cited by

3References

20Claims

0Family size

Assignee

Osram OLED GMBH · DE

Inventors

Sven Gerhard · Alteglofsheim, DE
Alfred Lell · Maxhütte-Haidhof, DE
Clemens Vierheilig · Tegernheim, DE
Andreas Loeffler · Neutraubling, DE
Christoph Eichler · Donaustauf, DE

Key dates

Filing date	Sep 27, 2016
Grant date	Oct 20, 2020
Priority date	—
Expiry date	Apr 5, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01S2301/176
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The disclosure relates to a semiconductor laser includes a semiconductor layer sequence with an-n-type n-region, a p-type p-region and an active zone lying between the two for the purpose of generating laser radiation. A p-contact layer that is permeable to the laser radiation and consists of a transparent conductive oxide is located directly on the p-region for the purpose of current input. An electrically-conductive metallic p-contact structure is applied directly to the p-contact layer. The p-contact layer is one part of a cover layer, and therefore the laser radiation penetrates as intended into the p-contact layer during operation of the semiconductor laser. Two facets of the semiconductor layer sequence form resonator end surfaces for the laser radiation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.