SAW device and method of manufacture
US10812035B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2018 |
| Grant date | Oct 20, 2020 |
| Priority date | — |
| Expiry date | Oct 2, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/0442
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method of reducing non-uniformity in the resonance frequencies of a surface acoustic wave (SAW) device, the SAW device comprising a silicon oxide layer comprising an oxide of silicon deposited over interdigital transducers on a piezoelectric substrate by reactive sputtering. The method comprises positioning a piezoelectric substrate having interdigital transducers on a substrate support, then depositing a silicon oxide layer comprising an oxide of silicon over the piezoelectric substrate and the interdigital transducers to form a SAW device. The substrate support is positioned relative to a sputtering target so that the silicon oxide layer of the SAW device has an arithmetic mean surface roughness (Ra) of 11 angstroms or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.