Photolithography method and system based on high step slope
US10816903B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 27, 2018 |
| Grant date | Oct 27, 2020 |
| Priority date | — |
| Expiry date | Nov 14, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2035
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photolithography system based on a high step slope may include a depositing unit configured to manufacture a sacrificial layer having high step slope on a substrate. The system may also include a coating unit configured to coat a photoresist layer on the sacrificial layer by performing a spin-on PR coating process to form a photolithographic layer. The system may further include a photolithography unit configured to perform one or more photolithography processes to the photolithographic layer. The photolithography unit may comprise a plurality of masks of compensation patterns. The compensation pattern may comprise a slope-top compensation pattern and a slope compensation pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.