Method of etching at low temperature and plasma etching apparatus
US10818503B2 · kind B2 · utility
2Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2019 |
| Grant date | Oct 27, 2020 |
| Priority date | — |
| Expiry date | Jan 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching at a low temperature includes cooling a pedestal on which a wafer is disposed, etching the wafer by generating plasma from a gas supplied through a gas distribution unit, and injecting a heated inert gas into the chamber through the gas distribution unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.